Observation of capacitance-voltage oscillations in porous silicon
This paper presents the experimental observation of room temperature capacitance–voltage oscillations in porous silicon (PS). Analysis of the experimental data suggests density-of-states discontinuities in the PS nanostructures to be the likely origins of the oscillations. From the experimental data, a sub-band energy separation ofis estimated for the dominant silicon nanostructures. This corresponds to a nanostructure dimension of approximately, which agrees well with the value expected for the PS fabrication conditions.
Nanostructured materials; Silicon; Voltage
Electrical and Computer Engineering | Electronic Devices and Semiconductor Manufacturing | Semiconductor and Optical Materials
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Observation of capacitance-voltage oscillations in porous silicon.
Physica E-Low-Dimensional Systems & Nanostructures, 23