Observation of Capacitance-voltage Oscillations in Porous Silicon

Authors

Biswajit Das, University of Nevada, Las VegasFollow

Document Type

Article

Publication Date

6-2004

Publication Title

Physica E-Low-Dimensional Systems & Nanostructures

Volume

23

First page number:

141

Last page number:

146

Abstract

This paper presents the experimental observation of room temperature capacitance–voltage oscillations in porous silicon (PS). Analysis of the experimental data suggests density-of-states discontinuities in the PS nanostructures to be the likely origins of the oscillations. From the experimental data, a sub-band energy separation ofis estimated for the dominant silicon nanostructures. This corresponds to a nanostructure dimension of approximately, which agrees well with the value expected for the PS fabrication conditions.

Keywords

Nanostructured materials; Silicon; Voltage

Disciplines

Electrical and Computer Engineering | Electronic Devices and Semiconductor Manufacturing | Semiconductor and Optical Materials

Language

English

Permissions

Use Find in Your Library, contact the author, or interlibrary loan to garner a copy of the item. Publisher policy does not allow archiving the final published version. If a post-print (author's peer-reviewed manuscript) is allowed and available, or publisher policy changes, the item will be deposited.

Repository Citation

Das, B. (2004). Observation of Capacitance-voltage Oscillations in Porous Silicon. Physica E-Low-Dimensional Systems & Nanostructures, 23 141-146.