Pressure-Induced Structural and Electronic Transitions, Metallization, and Enhanced Visible-Light Responsiveness in Layered Rhenium Disulphide
Physical Review B
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Triclinic rhenium disulphide (ReS2) is a promising candidate for postsilicon electronics because of its unique optic-electronic properties. The electrical and optical properties of ReS2 under high pressure, however, remain unclear. Here we present a joint experimental and theoretical study on the structure, electronic, and vibrational properties, and visible-light responses of ReS2 up to 50 GPa. There is a direct-to-indirect band-gap transition in 1T-ReS2 under low-pressure regime up to 5 GPa. Upon further compression, 1T-ReS2 undergoes a structural transition to distorted-1T′ phase at 7.7 GPa, followed by the isostructural metallization at 38.5 GPa. Both in situ Raman spectrum and electronic structure analysis reveal that interlayer sulfur-sulfur interaction is greatly enhanced during compression, leading to the remarkable modifications on the electronic properties observed in our subsequent experimental measurements, such as band-gap closure and enhanced photoresponsiveness. This study demonstrates the critical role of pressure in tuning materials properties and the potential usage of layered ReS2 for pressure-responsive optoelectronic applications.
Pressure-Induced Structural and Electronic Transitions, Metallization, and Enhanced Visible-Light Responsiveness in Layered Rhenium Disulphide.
Physical Review B, 97(23),