Synthesis of a Novel Strontium-based Wide-bandgap Semiconductor Via X-ray Photochemistry under Extreme Conditions

Authors

Egor Evlyukhin, University of Nevada, Las VegasFollow
Eunja Kim, University of Nevada, Las VegasFollow
Petrika Cifligu, University of Nevada, Las Vegas
David Goldberger, University of Nevada, Las Vegas
Sarah Schyck, University of Nevada, Las Vegas
Blake Harris, University of Nevada, Las Vegas
Sindi Torres, University of Nevada, Las Vegas
George R. Rossman, California Institute of TechnologyFollow
Michael Pravica, University of Nevada, Las VegasFollow

Document Type

Article

Publication Date

11-2-2018

Publication Title

Journal of Materials Chemistry C

Volume

6

Issue

46

First page number:

12473

Last page number:

12478

Abstract

The synthesis and characterization of a novel, low cost, amorphous wide-bandgap semiconductor via X-ray induced decomposition of strontium oxalate at high pressure have been demonstrated. By means of IR spectroscopy, the final product is identified as a mixture of strontium carbonate, strontium oxalate and CO-derived materials. Band gap measurements demonstrate that the final product exhibits a much lower band gap (2.45 eV) than the initial strontium oxalate powder (4.07 eV), suggesting that the synthesized material can be highly useful in electronic and optical applications.

Disciplines

Materials Chemistry

Language

English

Repository Citation

Evlyukhin, E., Kim, E., Cifligu, P., Goldberger, D., Schyck, S., Harris, B., Torres, S., Rossman, G. R., Pravica, M. (2018). Synthesis of a Novel Strontium-based Wide-bandgap Semiconductor Via X-ray Photochemistry under Extreme Conditions. Journal of Materials Chemistry C, 6(46), 12473-12478.
http://dx.doi.org/10.1039/c8tc04496a