Synthesis of a Novel Strontium-based Wide-bandgap Semiconductor Via X-ray Photochemistry under Extreme Conditions
Journal of Materials Chemistry C
First page number:
Last page number:
The synthesis and characterization of a novel, low cost, amorphous wide-bandgap semiconductor via X-ray induced decomposition of strontium oxalate at high pressure have been demonstrated. By means of IR spectroscopy, the final product is identified as a mixture of strontium carbonate, strontium oxalate and CO-derived materials. Band gap measurements demonstrate that the final product exhibits a much lower band gap (2.45 eV) than the initial strontium oxalate powder (4.07 eV), suggesting that the synthesized material can be highly useful in electronic and optical applications.
Rossman, G. R.,
Synthesis of a Novel Strontium-based Wide-bandgap Semiconductor Via X-ray Photochemistry under Extreme Conditions.
Journal of Materials Chemistry C, 6(46),