Annealing-induced Effects on the Chemical Structure of the In2S3/CuIn(S,Se)2 thin-film Solar Cell Interface

Authors

D. Hauschild, University of WürzburgFollow
F. Meyer, University of WürzburgFollow
A. Benkert, University of WürzburgFollow
D. Kreikemeyer-Lorenzo, Karlsruhe Institute of TechnologyFollow
S. Pohlner, AVANCIS GmbHFollow
J. Palm, AVANCIS GmbHFollow
Monika A. Blum, University of Nevada, Las VegasFollow
W. Yang, Lawrence Berkeley National LaboratoryFollow
R. G. Wilks, Helmholtz-Zentrum BerlinFollow
M. Bär, University of Nevada, Las VegasFollow
Clemens Heske, University of Nevada, Las VegasFollow
L. Weinhardt, Karlsruhe Institute of TechnologyFollow
F. Reinert, University of WürzburgFollow

Document Type

Article

Publication Date

5-14-2015

Publication Title

The Journal of Physical Chemistry C

Volume

119

Issue

19

First page number:

10412

Last page number:

10416

Abstract

We have investigated the impact of heat treatments on the chemical structure of the In2S3/CuIn(S,Se)2 thin-film solar cell interface using X-ray photoelectron and soft X-ray emission spectroscopy. As-grown, we find the formation of a sulfur-poor (indium-rich) In2S3 surface, an abrupt interface, and sulfur atoms in both In2S3 and CuIn(S,Se)2 chemical environments (as expected for an abrupt interface and a thin overlayer). After a heat treatment at 200 °C to simulate subsequent process steps, a strong copper and sodium diffusion into the In2S3 layer is observed. This diffusion extends throughout the layer, indicating the formation of a copper–indium–sulfide phase.

Repository Citation

Hauschild, D., Meyer, F., Benkert, A., Kreikemeyer-Lorenzo, D., Pohlner, S., Palm, J., Blum, M. A., Yang, W., Wilks, R. G., Bär, M., Heske, C., Weinhardt, L., Reinert, F. (2015). Annealing-induced Effects on the Chemical Structure of the In2S3/CuIn(S,Se)2 thin-film Solar Cell Interface. The Journal of Physical Chemistry C, 119(19), 10412-10416.
http://dx.doi.org/10.1021/acs.jpcc.5b01622