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Description

Molybdenum disulfide transistor devices were fabricated utilizing muscovite mica as dielectrics in order to test the hydrophilic behavior of mica. This was done by probing the device for its transconductance plot to show hysteretic patterns. Devices were fabricated using a clean van der Waals technique to stack two-dimensional materials into heterostructures. The devices showed a hysteretic trend in the transconductance curve. We compared the hysteretic behavior from mica with that of another well-known dielectric, silicon dioxide. The devices with mica dielectrics showed larger hysteresis in the gate sweeps than silicon dioxide. Devices utilizing mica as dielectrics are expected to have hysteretic behaviors due to the interfacial water on the mica surface. It is also speculated that water accumulation will continue to grow on the surface as long as the device is in ambient conditions, so the hysteresis may worsen over time. We aim to mitigate water absorption at the surface of mica and suggest future work to accomplish this goal.

Publication Date

Fall 11-15-2021

Language

English

Keywords

Muscovite; Mica; Transistors; Hysteresis; Transconductance

File Format

pdf

File Size

905 KB

Comments

Faculty Mentor: Joshua Island, Ph.D.

Rights

IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/

Utilizing Muscovite to Create High Mobility Molybdenum Disulfide Transistors


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