Electronic Structure of CdO Studied by Soft X-ray Spectroscopy

Document Type

Article

Publication Date

4-2011

Publication Title

Journal of Electron Spectroscopy and Related Phenomena

Publisher

Elsevier

Volume

184

Issue

2021-03-06

First page number:

249

Last page number:

253

Abstract

We present X-ray absorption spectroscopy (XAS) and resonance inelastic X-ray scattering (RIXS) measurements of CdO thin film. The observed differences between bulk and surface XAS signals suggest the presence of a surface electron accumulation layer in CdO film. The native defects (oxygen vacancies) strongly influence on the electronic structure of CdO resulting in the absorption threshold position/onset and spectral profile changes. To interpret the obtained data ab initio theoretical calculations, using the FEFF code, were performed and compared to the experimental results. The calculated angular-momentum-projected local density of states (PDOS) describes well the experimental data. The direct and indirect gaps of CdO were estimated to be ∼2.4 eV and ∼0.9 eV, respectively, by overlapping the XAS spectrum with RIXS. These results are consistent with our optical absorption measurements as well as theoretical and experimental band gap values of CdO reported in the literature.

Controlled Subject

Cadmium crystals; Transparent semiconductors; X-ray absorption near edge structure

Disciplines

Atomic, Molecular and Optical Physics | Physical Chemistry | Physics

Language

English

Permissions

Use Find in Your Library, contact the author, or use interlibrary loan to garner a copy of the article. Publisher copyright policy allows author to archive post-print (author’s final manuscript). When post-print is available or publisher policy changes, the article will be deposited

Rights

IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/

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