Electronic structure of CdO studied by soft X-ray spectroscopy
Journal of Electron Spectroscopy and Related Phenomena
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We present X-ray absorption spectroscopy (XAS) and resonance inelastic X-ray scattering (RIXS) measurements of CdO thin film. The observed differences between bulk and surface XAS signals suggest the presence of a surface electron accumulation layer in CdO film. The native defects (oxygen vacancies) strongly influence on the electronic structure of CdO resulting in the absorption threshold position/onset and spectral profile changes. To interpret the obtained data ab initio theoretical calculations, using the FEFF code, were performed and compared to the experimental results. The calculated angular-momentum-projected local density of states (PDOS) describes well the experimental data. The direct and indirect gaps of CdO were estimated to be ∼2.4 eV and ∼0.9 eV, respectively, by overlapping the XAS spectrum with RIXS. These results are consistent with our optical absorption measurements as well as theoretical and experimental band gap values of CdO reported in the literature.
Cadmium crystals; Semiconductor films; Transparent semiconductors; X-ray absorption near edge structure; X-ray spectroscopy
Atomic, Molecular and Optical Physics | Physical Chemistry | Physics
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Demchenko, I. N.,
Denlinger, J. D.,
Yu, K. M.,
Speaks, D. T.,
Electronic structure of CdO studied by soft X-ray spectroscopy.
Journal of Electron Spectroscopy and Related Phenomena, 184(3-6),