Evaluation of new materials for electron and hole transport layers in perovskite-based solar cells through SCAPS-1D simulations
Document Type
Conference Proceeding
Publication Date
1-1-2016
Publication Title
Conference Record of the IEEE Photovoltaic Specialists Conference
Publisher
Institute of Electrical and Electronics Engineers Inc.
Volume
November
First page number:
747
Last page number:
750
Abstract
Conventional electron and hole transport materials for perovskites, such as TiO2 and Spiro-OMeTAD, have been known to be susceptible to light induced degradation. Some studies have also suggested that the hysteresis effect observed in perovskite based devices could be correlated, in part, with light-induced defects at tio2/perovskite interface. In this study, several alternative electron and hole transport layers for planar solar cell devices based on CH3NH3PbI3 perovskite were explored with SCAPS-1D simulations. Due to its tunable bandgap and high electron affinity, ZnOS has been shown as best replacement for TiO2. NiO and CsSnI3 are good potential alternatives for Spiro-OMeTAD to address the stability issues. © 2016 IEEE.
Keywords
ETL; HTL; Perovskite; SCAPS-1D; solar cell; ZnOS
Language
English
Repository Citation
Bansal, S.,
Aryal, P.
(2016).
Evaluation of new materials for electron and hole transport layers in perovskite-based solar cells through SCAPS-1D simulations.
Conference Record of the IEEE Photovoltaic Specialists Conference, November
747-750.
Institute of Electrical and Electronics Engineers Inc..
http://dx.doi.org/10.1109/PVSC.2016.7749702