Document Type
Article
Publication Date
9-15-2022
Publication Title
Nano Letters
Volume
22
Issue
18
First page number:
7457
Last page number:
7466
Abstract
We demonstrate the fabrication of field-effect transistors based on single-layer MoS2 and a thin layer of BaTiO3 (BTO) dielectric, isolated from its parent epitaxial template substrate. Thin BTO provides an ultrahigh-κ gate dielectric effectively screening Coulomb scattering centers. These devices show mobilities substantially larger than those obtained with standard SiO2 dielectrics and comparable with values obtained with hexagonal boron nitride, a dielectric employed for fabrication of high-performance two-dimensional (2D) based devices. Moreover, the ferroelectric character of BTO induces a robust hysteresis of the current vs gate voltage characteristics, attributed to its polarization switching. This hysteresis is strongly suppressed when the device is warmed up above the tetragonal-to-cubic transition temperature of BTO that leads to a ferroelectric-to-paraelectric transition. This hysteretic behavior is attractive for applications in memory storage devices. Our results open the door to the integration of a large family of complex oxides exhibiting strongly correlated physics in 2D-based devices.
Keywords
Freestanding complex oxide; ferroelectric perovskite oxide; ferroelectric field effect transistor; molybdenum disulfide (MoS₂); barium titanate (BaTiO₃)
Disciplines
Atomic, Molecular and Optical Physics | Geochemistry | Materials Chemistry
File Format
File Size
5760 KB
Language
English
Rights
IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/
Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 License.
Repository Citation
Puebla, S.,
Pucher, T.,
Rouco, V.,
Sanchez-Santolino, G.,
Xie, Y.,
Zamora, V.,
Cuellar, F. A.,
Mompean, F. J.,
Leon, C.,
Island, C. O.,
Garcia-Hernandez, M.,
Santamaria, J.,
Munuera, C.,
Castellanos-Gomez, A.
(2022).
Combining Freestanding Ferroelectric Perovskite Oxides with Two-Dimensional Semiconductors for High Performance Transistors.
Nano Letters, 22(18),
7457-7466.
http://dx.doi.org/10.1021/acs.nanolett.2c02395
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