Award Date

1-1-2000

Degree Type

Thesis

Degree Name

Master of Science (MS)

Department

Electrical and Computer Engineering

First Committee Member

Rama Venkat

Number of Pages

105

Abstract

III-V nitrides (GaN, InN and AlN) are intensely researched for optoelectronic applications spanning the entire visible spectrum. In spite of realization of commercial devices and advances in processing of materials and devices, the understanding of the processing and epitaxial growth of these materials are incomplete. In this study, a rate equation approach is proposed based on physically sound surface processes to investigate the molecular beam epitaxy growth of GaN using ammonia and ECR plasma source. A surface riding layer of Ga and ammonia or N plasma species are included in the model. The surface riding species are allowed to undergo several physical and chemical processes. Rates of all surface processes are assumed Arrhenius type. The necessary model parameters which are unknown were found by fitting results from simulation to experimental values. (Abstract shortened by UMI.).

Keywords

Beam; Epitaxy; Gallium; Gan; Growth; Modeling; Molecular; Nitride

Controlled Subject

Electrical engineering; Materials science

File Format

pdf

File Size

2519.04 KB

Degree Grantor

University of Nevada, Las Vegas

Language

English

Permissions

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Identifier

https://doi.org/10.25669/cnbt-k9j5


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