Master of Science in Electrical Engineering (MSEE)
Electrical and Computer Engineering
Biswajit Das, Committee Chair
First Committee Member
Second Committee Member
Graduate Faculty Representative
Frank van Breukelen
Number of Pages
Low temperature crystallization of thin film silicon is important for many industrial applications including flat panel displays and silicon thin film solar cells. Unfortunately this remains a major challenge since crystallization temperature of silicon is above 1,000 degrees Celsius, thus limiting to substrates that can tolerate high temperatures. The inability to deposit crystalline thin films on glass substrates is the reason why flat panel display industry uses amorphous silicon for LCD active matrix displays. Thus the ability to deposit crystallized thin film silicon at low temperatures will have significant impact on thin film silicon applications. It has been observed that certain metals can lower the crystallization temperature of silicon; however, investigation in this area has been rather limited. This thesis investigates the effect of two different metals, aluminum and silver, on the dependence of crystallization temperature of silicon thin films and investigates the properties of such materials.
Aluminum; Annealing of silicon films; Low temperatures; Metal-induced crystallization (MIC); Raman of crystalline silicon; Silicon thin films; Silver; X-Ray diffraction of crystalline silicon
Electrical and Computer Engineering | Materials Science and Engineering | Nanoscience and Nanotechnology
University of Nevada, Las Vegas
Sangaraju, Sandeep Kumar Raju, "Metal induced crystallization of silicon thin films" (2009). UNLV Theses, Dissertations, Professional Papers, and Capstones. 163.
IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/