Document Type
Article
Publication Date
12-1-2021
Publication Title
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume
39
Issue
6
First page number:
1
Last page number:
8
Abstract
The inelastic background of hard x-ray photoelectron spectroscopy data is analyzed to paint a depth-resolved picture of the CdS/Cu(In,Ga)Se2 (CdS/CIGSe) layer structure. The CdS/CIGSe interface is the central component in next-generation chalcopyrite thin-film photovoltaic devices. By analyzing both, the (unscattered) core-level peaks and the inelastic background, and by varying the excitation photon energy from 2.1 up to 14 keV, we can derive photoemission information over a broad range of electron kinetic energies and, hence, sampling depths. With this complementary information, the CdS film thickness of a CdS/CIGSe interface can be accurately determined as a function of the CdS deposition time. For the thinner CdS films, the film thickness can be shown to vary laterally. Furthermore, small amounts of Se and process-related Rb can be detected in a thin (∼2 nm) surface layer of all investigated CdS films.
Controlled Subject
X-ray photoelectron spectroscopy
Disciplines
Electromagnetics and Photonics
File Format
File Size
2012 KB
Rights
IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/
Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 License.
Repository Citation
Hauschild, D.,
Steininger, R.,
Hariskos, D.,
Witte, W.,
Tougaard, S.,
Heske, C.,
Weinhardt, L.
(2021).
Using the Inelastic Background in Hard X-Ray Photoelectron Spectroscopy for a Depth-Resolved Analysis of the Cds / CU(In,GA)SE < Inf > 2 < / Inf > Interface.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 39(6),
1-8.
http://dx.doi.org/10.1116/6.0001336