Novel Quantum Wire Infrared Photodetectors

Document Type

Article

Publication Date

1-2005

Publication Title

Infrared Physics & Technology

Volume

46

First page number:

209

Last page number:

218

Abstract

This paper describes novel semiconductor quantum wire infrared photodetectors in the long- and very long-wavelength regions. The infrared photodetectors are based on intersubband transitions in semiconductor quantum wires and have the potential for higher operational temperature, increased signal-to-noise ratio, reduced dark current, wider spectral range and sensitivity to normal incident radiation. The quantum wire IR detectors are implemented using a nonlithographic nanostructure fabrication technique that is capable of producing large arrays of semiconductor quantum wires of a variety of materials and on different substrates. This paper describes the operational principles, the design procedure as well as the implementation of the quantum wire photodetectors.

Keywords

Heterostructures; Infrared detectors; Nanowires; Optical detectors

Disciplines

Electrical and Computer Engineering | Electromagnetics and Photonics | Electronic Devices and Semiconductor Manufacturing | Engineering

Language

English

Permissions

Use Find in Your Library, contact the author, or interlibrary loan to garner a copy of the item. Publisher policy does not allow archiving the final published version. If a post-print (author's peer-reviewed manuscript) is allowed and available, or publisher policy changes, the item will be deposited.

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