CIGS Device Models with Variations of Buffer Layer, Alkali Content, and Oxidation
Document Type
Conference Proceeding
Publication Date
1-5-2020
Publication Title
2021 47th IEEE Virtual Photovoltaic Specialists Conference (PVSC)
First page number:
508
Last page number:
514
Abstract
Nine types of CIGS cells were studied with permutations of sodium content, buffer type (CdS or Zn(O, S)), and post-deposition treatment (PDT) with KF, RbF, or oxidation. JV, QE, and CV measurements are presented for several cells of each type. KF PDT with CdS buffer resulted in the highest efficiency. Although Zn(O, S) buffer cells with typical sodium content had relatively low efficiency, RbF PDT significantly improved performance. Oxidation alone significantly increased the efficiency of sodium deficient cells with CdS buffer. Numerical modeling was conducted to connect device properties to the observed performance variations.
Keywords
CIGS cells; Cd-free buffer; Device simulation; Alkali post-deposition treatment
Disciplines
Engineering | Mechanical Engineering | Other Mechanical Engineering
Language
English
Repository Citation
Nardone, M.,
Walkons, C.,
Paetel, S.,
Friedlmeier, T. M.,
Kweon, K. E.,
Lordi, V.,
Bansal, S.
(2020).
CIGS Device Models with Variations of Buffer Layer, Alkali Content, and Oxidation.
2021 47th IEEE Virtual Photovoltaic Specialists Conference (PVSC)
508-514.
http://dx.doi.org/10.1109/PVSC45281.2020.9300454