Electronic structure of the Zn(O,S)/Cu(In,Ga)Se2 thin-film solar cell interface
Document Type
Article
Publication Date
1-1-2016
Publication Title
Progress in Photovoltaics: Research and Applications
Volume
24
Issue
8
First page number:
1142
Last page number:
1148
Abstract
The electronic band alignment of the Zn(O,S)/Cu(In,Ga)Se2 interface in high-efficiency thin-film solar cells was derived using X-ray photoelectron spectroscopy, ultra-violet photoelectron spectroscopy, and inverse photoemission spectroscopy. Similar to the CdS/Cu(In,Ga)Se2 system, we find an essentially flat (small-spike) conduction band alignment (here: a conduction band offset of (0.09 ± 0.20) eV), allowing for largely unimpeded electron transfer and forming a likely basis for the success of high-efficiency Zn(O,S)-based chalcopyrite devices. Furthermore, we find evidence for multiple bonding environments of Zn and O in the Zn(O,S) film, including ZnO, ZnS, Zn(OH)2, and possibly ZnSe. Copyright © 2016 John Wiley & Sons, Ltd. Copyright © 2016 John Wiley & Sons, Ltd.
Keywords
alternative buffer layers; band alignment; chalcopyrite thin-film solar cell; inverse photoemission; X-ray spectroscopy; Zn(O; S)
Language
English
Repository Citation
Mezher, M.,
Garris, R.,
Mansfield, L. M.,
Horsley, K.,
Weinhardt, L.,
Duncan, D. A.,
Blum, M.,
Rosenberg, S. G.,
Bär, M.,
Ramanathan, K.,
Heske, C.
(2016).
Electronic structure of the Zn(O,S)/Cu(In,Ga)Se2 thin-film solar cell interface.
Progress in Photovoltaics: Research and Applications, 24(8),
1142-1148.
http://dx.doi.org/10.1002/pip.2764