Award Date
1-1-2000
Degree Type
Thesis
Degree Name
Master of Science (MS)
Department
Chemistry
First Committee Member
Linda S. Sapochak
Number of Pages
114
Abstract
Metal (8-quinolinolato) (Mqn) chelates have proven to be viable for use in organic light-emitting devices (OLEDs), both as the active emitter layer and as the electron-transporting host in dye-doped OLEDs. Whether serving as the emitter layer or host material the energy level-alignment affecting charge injection efficiency and charge mobility properties are of equal importance. Substitution of the 8-quinolinolato ligand or substitution of different metal ions has been shown to shift absorption and emission energies, which can modify the relative energy level alignments of the HOMO and LUMO levels at charge injection interfaces in an OLED. Furthermore, substitution of metal ions of different oxidation states will result in differing coordination geometries of the resulting metal chelates. For Alq3, the electron transport properties and the good thermal stability of vapor-deposited films have been attributed to its octahedral geometry. In this work, we present a comparative study of the photophysical (absorption and emission) properties and thermal stability properties of methylated zinc bis-quinolates and lithium mono-quinolates. Results are related to aluminum tris-quinolates and implications on electroluminescence performance will be discussed.
Keywords
Bis; Comparative; Coordination; Effects; Electroluminescence; Geometry; Investigation; Lithium; Mono; Performance; Quinolates; Study; Zinc
Controlled Subject
Chemistry, Physical and theoretical; Organic chemistry
File Format
File Size
3061.76 KB
Degree Grantor
University of Nevada, Las Vegas
Language
English
Permissions
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Repository Citation
Endrino, Flocerfida Lalo, "Comparative study of zinc bis-quinolates and lithium mono-quinolates: Investigation of the effect of coordination geometry on electroluminescence performance" (2000). UNLV Retrospective Theses & Dissertations. 1242.
http://dx.doi.org/10.25669/gzon-8670
Rights
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