Theoretical study of segregation kinetics of indium in indium gallium nitride and magnesium in magnesium-gallium nitride grown by molecular beam epitaxy

Author

Irena Vidhya Mabel Stanley, University of Nevada, Las VegasFollow

Award Date

1-1-2003

Degree Type

Thesis

Degree Name

Master of Engineering (ME)

Department

Electrical and Computer Engineering

First Committee Member

Rama Venkat

Number of Pages

66

Abstract

A rate equation model including all physically relevant surface processes is developed for the study of In segregation in InGaN and Mg segregation in Mg-GaN MBE growth. In InGaN growth, the simulations were carried for a variety of growth conditions spanning the growth parameter space: substrate temperature in the range of 500--700°C: Ga flux in the range of 1.17--8.98 nm/min: In flux in the range of 0.39--28.74 nm/min and N flux in the range of 4.7--12 nm/min. Results of In incorporation obtained from simulations are within 1% agreement with the experiments reported in the literature. In segregation is found to be negligible below 580°C . Above 640°C, the segregation dominates the kinetics. This temperature dependence is found to be independent of the fluxes. In Mg-GaN growth, simulations were carried for various growth temperatures in the range of 600--750°C with constant flux rates of Mg, Ga and N. For the given flux rates, it is found that Mg segregates to the surface with the increase in temperature. Above 750°C a dopant depleted zone is formed below the surface layer. Results obtained from simulations are in good qualitative agreement with the experimental data.

Keywords

Beam; Epitaxy; Gallium; Gan; Grown; Indium; Ingan; Kinetics; Magnesium Molecular; Nitride; Segregation; Study; Theoretical

Controlled Subject

Electrical engineering; Materials science

File Format

pdf

File Size

1433.6 KB

Degree Grantor

University of Nevada, Las Vegas

Language

English

Permissions

If you are the rightful copyright holder of this dissertation or thesis and wish to have the full text removed from Digital Scholarship@UNLV, please submit a request to digitalscholarship@unlv.edu and include clear identification of the work, preferably with URL.

Repository Citation

Stanley, Irena Vidhya Mabel, "Theoretical study of segregation kinetics of indium in indium gallium nitride and magnesium in magnesium-gallium nitride grown by molecular beam epitaxy" (2003). UNLV Retrospective Theses & Dissertations. 1510.
http://dx.doi.org/10.25669/nkee-29pm

Rights

IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/