Award Date

1-1-1991

Degree Type

Thesis

Degree Name

Master of Science (MS)

Department

Computer Science and Electrical Engineering

First Committee Member

Rahim Khoie

Number of Pages

95

Abstract

In this thesis a Full Dynamic Transport Model is presented which consists of the Momentum Conservation Equation (MCE), Energy Conservation Equation (ECE), Particle Conservation Equation (PCE), and Poisson's Equation. In our model carrier velocity and electron energy are taken as variables and have been found using electron concentration and electrostatic potential; It has been found that by increasing the doping from 10{dollar}\sp{16}cm\sp{-3}{dollar} to 5 {dollar}\times{dollar} 10{dollar}\sp{17}cm\sp{-3}{dollar}, the built-in voltage of an {dollar}Al\sb{0.3}Ga\sb{0.7}As/GaAs{dollar} heterojunction increases from 1.33V to 1.54V which is consistent with the results reported by others (1) {dollar}-{dollar} (4). Maximum velocity of electrons changes from 2.5 {dollar}\times{dollar} 10{dollar}\sp7{dollar}cm/sec to 1.8 {dollar}\times{dollar} 10{dollar}\sp7{dollar} cm/sec, which is due to the increased collision of electrons with doping impurities. This is also the reason for increased electron average energy from 270mev to 640mev. This increase in energy is believed to be due to the hot-electron phenomenon. (Abstract shortened with permission of author.).

Keywords

Devices; Dynamic; Formulation; Full; Heterojunction; Model; Transport

Controlled Subject

Electrical engineering; Engineering

File Format

pdf

File Size

2621.44 KB

Degree Grantor

University of Nevada, Las Vegas

Language

English

Permissions

If you are the rightful copyright holder of this dissertation or thesis and wish to have the full text removed from Digital Scholarship@UNLV, please submit a request to digitalscholarship@unlv.edu and include clear identification of the work, preferably with URL.

Rights

IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/

Download


Share

COinS