Award Date
1-1-2003
Degree Type
Thesis
Degree Name
Master of Science (MS)
Department
Electrical and Computer Engineering
First Committee Member
Rama Venkat
Number of Pages
80
Abstract
The study of subthreshold behavior of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is critically important in the case of submicron devices for the successful design and implementation of digital circuits. Fin Field Effect Transistor (FinFET) is considered to be an alternate MOSFET structure in the deep sub-micron regime. A 3D Poisson equation solver is employed to study the subthreshold behavior of FinFET. Based on potential distribution inside the fin, the appropriate band bending and the subthreshold value called the S-factor is calculated. It is observed that the S-factor of the device increases as the channel width, Tfin increases. This is attributed to the fact that the change in the band bending is less than the change in the applied gate voltage. This is only a first order analysis; hence the device is simulated in a device simulator Taurus. It is observed that the S-factor increases exponentially for channel lengths Lg < 1.5Tfin. Further, for a constant Lg, the S factor is observed to increase as Tfin increases. An empirical relationship between S, Lg and Tfin is developed based on the simulation results, which can be used as a rule of thumb for determining the S-factor of devices.
Keywords
Behavior; Finfet; Study; Subthreshold
Controlled Subject
Electrical engineering; Physics
File Format
File Size
2007.04 KB
Degree Grantor
University of Nevada, Las Vegas
Language
English
Permissions
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Repository Citation
Murugan, Balasubramanian, "Study of subthreshold behavior of FinFet" (2003). UNLV Retrospective Theses & Dissertations. 1604.
http://dx.doi.org/10.25669/9ip7-6oho
Rights
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