Award Date

1-1-2004

Degree Type

Thesis

Degree Name

Master of Science (MS)

Department

Electrical and Computer Engineering

First Committee Member

Biswajit Das

Number of Pages

44

Abstract

The thesis describes novel semiconductor quantum wire infrared photodetectors in the long- and very long-wavelength regions. The infrared photodetectors are based on intersubband transitions in semiconductor quantum wires and have the potential for higher operational temperature, increased signal-to-noise ratio, reduced dark current, wider spectral range and sensitivity to normal incident radiation. The quantum wire IR detectors were implemented using a nonlithographic nanostructure fabrication technique that is capable of producing large arrays of semiconductor quantum wires of a variety of materials and on different substrates. The operational principles, design procedure as well as the implementation of the quantum wire photodetectors using electrochemical anodization will be described.

Keywords

Fabrication; Infrared; Nonlithographic; Photodetector; Quantum; Semiconductor; Wire

Controlled Subject

Electrical engineering

File Format

pdf

File Size

1904.64 KB

Degree Grantor

University of Nevada, Las Vegas

Language

English

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Rights

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