Award Date

1-1-1989

Degree Type

Thesis

Degree Name

Master of Science (MS)

Department

Electrical and Computer Engineering

Number of Pages

91

Abstract

A two-dimensional numerical model of the high electron mobility transistor (HEMT) with consideration of quantization in the channel is presented. In this model, the spatial spread of the electron concentration in the quantum well normal to the heterojunction is taken into consideration by solving Schrodinger's and Poisson's equations self-consistently. The Boltzmann transport equation in the form of a current continuity equation and an energy transport equation is solved to obtain the transient transport behavior. Transport of carriers takes place in two layers in the GaAs region: the lowest subband of the quantum well and a non-quantized bulk layer; The simulation program investigates the effects on the overall performance of the device due to variation of the gate length and the impurity doping concentration in AlGaAs. A reduction in the gate length results in an increase of the drain current which is partly due to a shift in the threshold voltage. (Abstract shortened with permission of author.).

Keywords

Dimensional; Electron; High; Mobility; Model; Numerical Transistor

Controlled Subject

Computer science

File Format

pdf

File Size

2324.48 KB

Degree Grantor

University of Nevada, Las Vegas

Language

English

Permissions

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Identifier

https://doi.org/10.25669/r07q-alao


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