Award Date

1-1-1997

Degree Type

Thesis

Degree Name

Master of Science (MS)

Department

Electrical and Computer Engineering

Number of Pages

54

Abstract

Molecular Beam Epitaxial (MBE) silicon (Si) (111) grown below a certain temperature results in amorphous structure due to the limited surface mobility of atoms for finding the correct epitaxial sites. A theoretical model based on the formation of stacking fault like defects as a precursor to the amorphous transition of the (111)Si layer is developed. The model is simulated based on a stochastic model approach and the results are compared to that of experiments for temperatures in the range of {dollar}500{-}900\sp\circ{dollar}K and growth rate in the range of 0.1-3.0 {dollar}\A/sec.{dollar} The agreement between the results obtained and experimental observations is good. Temperature and growth rate dependencies of the crystal-amorphous transition are investigated and reported; Ultra large scale integration requires device miniaturization, which in turn, requires high quality ultra-thin silicon dioxide. In spite of various experimental and theoretical studies to understand the growth kinetics of ultra-thin oxidation, the understanding is not complete. A thermal oxidation model based on a rate equation approach with concentration dependent diffusion coefficient is proposed and employed to investigate the physics of oxidation of silicon in oxygen {dollar}(O\sb2){dollar} and nitrous oxide {dollar}(N\sb2O){dollar} ambients for thicknesses of the order of 100 A. (Abstract shortened by UMI.).

Keywords

Amorphous; Crystal; Oxidation; Silicon; Study; Theoretical; Transition

Controlled Subject

Electrical engineering; Materials science

File Format

pdf

File Size

1679.36 KB

Degree Grantor

University of Nevada, Las Vegas

Language

English

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