Award Date

1-1-1997

Degree Type

Thesis

Degree Name

Master of Science (MS)

Department

Electrical and Computer Engineering

Number of Pages

54

Abstract

Molecular Beam Epitaxial (MBE) silicon (Si) (111) grown below a certain temperature results in amorphous structure due to the limited surface mobility of atoms for finding the correct epitaxial sites. A theoretical model based on the formation of stacking fault like defects as a precursor to the amorphous transition of the (111)Si layer is developed. The model is simulated based on a stochastic model approach and the results are compared to that of experiments for temperatures in the range of {dollar}500{-}900\sp\circ{dollar}K and growth rate in the range of 0.1-3.0 {dollar}\A/sec.{dollar} The agreement between the results obtained and experimental observations is good. Temperature and growth rate dependencies of the crystal-amorphous transition are investigated and reported; Ultra large scale integration requires device miniaturization, which in turn, requires high quality ultra-thin silicon dioxide. In spite of various experimental and theoretical studies to understand the growth kinetics of ultra-thin oxidation, the understanding is not complete. A thermal oxidation model based on a rate equation approach with concentration dependent diffusion coefficient is proposed and employed to investigate the physics of oxidation of silicon in oxygen {dollar}(O\sb2){dollar} and nitrous oxide {dollar}(N\sb2O){dollar} ambients for thicknesses of the order of 100 A. (Abstract shortened by UMI.).

Keywords

Amorphous; Crystal; Oxidation; Silicon; Study; Theoretical; Transition

Controlled Subject

Electrical engineering; Materials science

File Format

pdf

File Size

1679.36 KB

Degree Grantor

University of Nevada, Las Vegas

Language

English

Permissions

If you are the rightful copyright holder of this dissertation or thesis and wish to have the full text removed from Digital Scholarship@UNLV, please submit a request to digitalscholarship@unlv.edu and include clear identification of the work, preferably with URL.

Rights

IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/

Download


COinS