Master of Science (MS)
Physics and Astronomy
First Committee Member
Second Committee Member
Third Committee Member
Fourth Committee Member
Number of Pages
Terahertz time-domain spectroscopy (THz-TDS) allows the direct measurement of optical and charge carrier properties of materials in a region of the electromagnetic spectrum inaccessible to most other spectroscopic techniques. We have adapted the technique to an on-chip arrangement that allows us to measure these properties in nanoscale materials with dimensions below the diffraction limit. In this thesis, we present the operation of instruments and the mechanics behind performing on-chip terahertz time-domain spectroscopy. Three materials were tested to confirm the capabilities of our system to measure THz radiation: indium selenide (InSe), radiation-damaged silicon-on-sapphire (RD-SOS), and an erbium arsenide:gallium arsenide superlattice. Preliminary testing with InSe failed to produce a measurable terahertz spectrum, while RD-SOS and the superlattice produced a bandwidth of 0.4 THz and 0.25 THz, respectively. While RD-SOS has a wider bandwidth, the radiation generated from the superlattice is stronger by a factor of thirty. We discuss adjustments to the fabrication process that may improve their bandwidths, and close with the intents to use this measurement to test for phenomena unique to two-dimensional systems.
bandwidth; experimental physics; two-dimensional systems; ultrafast
Condensed Matter Physics | Physics
University of Nevada, Las Vegas
Sterbentz, Randy, "On-Chip Terahertz Time-Domain Spectroscopy" (2021). UNLV Theses, Dissertations, Professional Papers, and Capstones. 4267.
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