Award Date

12-1-2022

Degree Type

Thesis

Degree Name

Master of Science (MS)

Department

Physics and Astronomy

First Committee Member

Ashkan Salamat

Second Committee Member

Joshua Island

Third Committee Member

Keith V. Lawler

Fourth Committee Member

Arya Udry

Abstract

The nanoscale regime of materials has been at the forefront of research and interest in condensed matter physics for many years. In a merger of the fields of two-dimensional (2D) materials and high pressure physics, we present an investigation of the electronic response of carbon-based, van der Waals (vdW) heterostructures in a diamond anvil cell (DAC). Combining these fields presents us with the ability to study the characteristics of such systems both optically, and through electrical transport. Properties such as conductance, band structure, and layer number are considered. The samples in this study are assembled using exfoliation and stacking techniques adapted from the 2D materials community such that atomically thin field-effect transistors can be transferred directly onto a diamond anvil surface. We discuss various techniques and tools employed to perform photolithography and electron beam deposition on the surface of diamond to make electrical connections to the heterostructures. As a benchmark, we present pressure measurements of MnS2 using photolithographically patterned electrodes. We then present electrical measurements of graphite-gated bilayer graphene at ambient pressure and discuss avenues for future developments. We anticipate these results will lead to an entirely new platform for the investigation of high-quality heterostructures at extreme pressures.

Keywords

diamond anvil cell; electronic band structure; field effect transistor; graphene; tight binding approximation; van der waals heterostructures

Disciplines

Condensed Matter Physics | Engineering Science and Materials | Materials Science and Engineering | Physics

File Format

pdf

File Size

71600 KB

Degree Grantor

University of Nevada, Las Vegas

Language

English

Rights

IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/

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