Impact of Annealing-Induced Intermixing on the Electronic Level Alignment at the In2S3/Cu(In,Ga)Se2 Thin-Film Solar Cell Interface

Authors

Marcus Bär, University of Nevada, Las VegasFollow
Nicolas Barreau, Universite de Nantes
Francois Couzinié-Devy, Universite de Nantes
Lothar Weinhardt, University of Nevada, Las VegasFollow
Regan G. Wilks, Helmholtz-Zentrum Berlin für Materialien und Energie GmbHFollow
John Kessler, Universite de Nantes
Clemens Heske, University of Nevada, Las VegasFollow

Document Type

Article

Publication Date

1-1-2016

Publication Title

ACS Applied Materials & Interfaces

Volume

8

Issue

3

First page number:

2120

Last page number:

2124

Abstract

The interface between a nominal In2S3 buffer and a Cu(In,Ga)Se2 (CIGSe) thin-film solar cell absorber was investigated by direct and inverse photoemission to determine the interfacial electronic structure. On the basis of a previously reported heavy intermixing at the interface (S diffuses into the absorber; Cu diffuses into the buffer; and Na diffuses through it), we determine here the band alignment at the interface. The results suggest that the pronounced intermixing at the In2S3/CIGSe interface leads to a favorable electronic band alignment, necessary for high-efficiency solar cell devices

Repository Citation

Bär, M., Barreau, N., Couzinié-Devy, F., Weinhardt, L., Wilks, R. G., Kessler, J., Heske, C. (2016). Impact of Annealing-Induced Intermixing on the Electronic Level Alignment at the In2S3/Cu(In,Ga)Se2 Thin-Film Solar Cell Interface. ACS Applied Materials & Interfaces, 8(3), 2120-2124.
http://dx.doi.org/10.1021/acsami.5b10614